MIPI M-PHY G4 Type 1 2Tx2RX in TSMC (16nm, 12nm, N7, N6, N5, N4, N3A, N3E)
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Single Port SRAM with low power retention mode, high speed pins on 1 side
Low Leakage. Mobile Semiconductor's Bulk 22 ULL SRAM memory compiler generates memory instances using the Bulk 22ULL process. Each ultra-low leakage memory instance primarily uses low leakage HVT (LLHVT) devices and source biasing to minimize standby current. Read and write assist circuits ensure reliable operations with a periphery power supply as low as 0.72V.
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