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HBM2e/3 PHY From INNOSILICON- High Performancce, Low Power and Low Latency Design in a Small Area
The third-generation HBM (HBM2e/3) technology, outlined by the JESD235C standard, inherits physical 128-bit DDR interface with 2n/4n prefetch architecture, internal organization, 1024-bit input/output, 1.2 V I/O and core voltages as well as all the crucial parts in the original technology. Just like the predecessor, HBM2e/3 supports two, four, eight or twelve DRAM devices on a base logic die (2Hi, 4Hi, 8Hi, 12Hi stacks) per KGSD. HBM Gen 3 expands the capacity of DRAM devices within a stack to 24GB and increases the data rate by up to 6.4Gb/s per pin. In addition, the new technology brings an important improvement to bandwidth maximization.
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