130GF_EEPROM_07 is a nonvolatile electrically erasable programmable read-only memory with volume 36Kbyte (32(bit per word) x 32(words per page) x 288(pages)) with parallel write/read data in one word. Write EEPROM page data comes to input DI<31:0> and write process execute if signal WR = “1”. Data DI<31:0>, page address ADR_P<8:0>, word address in page ADR_W<4:0> are latched into internal registers and cannot be changed until the end of the writing process. At the end of the writing, the READY = “1” flag is set. Data reading is carried out by specifying the page address ADR_P<8:0> and the address of the word in the page ADR_W<4:0>. After applying the reading strobe, the DO<31:0> signal is set at the output corresponding to the reading data from the corresponding addresses of the EEPROM cell. EEPROM also has a gated clock cell output (glitchless start) from a built-in oscillator. The oscillator has frequency control inputs to compensate for process variation. Memory is optimized for usage in the industrial and commercial applications, requiring low power consumption and supply voltage.