Low-Power Combo Bandgap Voltage and Current References (1.21V/600nA) - GlobalFoundries 0.13um BCD
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UMC 55nm embedded flash and embedded E2PROM ultra low power split-gate process synchronous well bias feature HVT periphery high density single port SRAM memory compiler.
UMC 55nm embedded flash and embedded E2PROM ultra low power split-gate process synchronous well bias feature HVT periphery high density single port SRAM memory compiler.
查看 UMC 55nm embedded flash and embedded E2PROM ultra low power split-gate process synchronous well bias feature HVT periphery high density single port SRAM memory compiler. 详细介绍：
- 查看 UMC 55nm embedded flash and embedded E2PROM ultra low power split-gate process synchronous well bias feature HVT periphery high density single port SRAM memory compiler. 完整数据手册
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