Revolution Semiconductor had designed an EPC Gen-2 v1.2 and ISO-18000-6c standards compliant prototype passive UHF RFID transponder integrated circuit. The fabrication process is TSMC 180nm CMOS MS-RF technology ensuring that the IP will have a virtually uninterrupted supply even in very high volumes. The fabricated silicon was tested in our test lab and was determinedto be fully functional. We are now working on the production release of our IP. We would like to hear from any parties interested in collaborating with us to further develop our UHF RFID intellectual property to their specifications.