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TSMC 22nm ULL Wirebond/Flipchip I/O Library with switchable 1.8V/3.3V GPIO, 3.3V I2C ODIO, and 3.3V Analog Cell
This is an ultra-low leakage library. The GPIO has a worst-case leakage of only 425nA. It works with a wide VDDIO supply range from 1.8V to 3.3V during system operation without the need for the customer to manually switch between high and low-voltage modes. The GPIO cell set can be configured as input or output and has an internal 50K ohm pull-up or
pull-down resistor. It has a sleep function which - when enabled - puts the I/O into an ultra-low power state and latches the I/O in the previous state. Cells for I/O, core power, and ground with built-in ESD circuitry are included. A power-on-control circuit is integrated into an available VDDIO cell. The GPIO can do TX and RX up to 150MHz. ESD targets are 2KV HBM / 500V CDM with 2KV IEC 61000-4-2 system stress capability.
pull-down resistor. It has a sleep function which - when enabled - puts the I/O into an ultra-low power state and latches the I/O in the previous state. Cells for I/O, core power, and ground with built-in ESD circuitry are included. A power-on-control circuit is integrated into an available VDDIO cell. The GPIO can do TX and RX up to 150MHz. ESD targets are 2KV HBM / 500V CDM with 2KV IEC 61000-4-2 system stress capability.
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Block Diagram of the TSMC 22nm ULL Wirebond/Flipchip I/O Library with switchable 1.8V/3.3V GPIO, 3.3V I2C ODIO, and 3.3V Analog Cell
