In-Chip Monitoring Subsystem for Process, Voltage & Temperature (PVT) Monitoring, TSMC N7
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SMIC 0.13um High-Speed Synchronous Single-Port/Dual-Port SRAM
VeriSilicon SMIC 0.13um High-Speed Synchronous Single-Port/Dual-Port SRAM optimized for Semiconductor Manufacturing International Corporation (SMIC) 0.13um Logic 1P8M Salicide 1.2/2.5(3.3)V process. While satisfying speed and power requirements, it was optimized for area efficiency.
VeriSilicon SMIC Synchronous Single-Port/Dual-Port SRAM uses four layers within the blocks and supports metal 6, 7 or 8 as the top metal. Dummy bit cells are designed in with the intention to enhance reliability.
VeriSilicon SMIC Synchronous Single-Port/Dual-Port SRAM uses four layers within the blocks and supports metal 6, 7 or 8 as the top metal. Dummy bit cells are designed in with the intention to enhance reliability.
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