Samsung 28nm FDSOI MIPI DPHY V1.1

特色

• Process: Samsung FDSOI 28nm 0.9V/1.8V, metal option TBD.
• Compliant to the MIPI D-PHY spec v1.1
• Data rate per lane: High-Speed mode 80M~1.5G bps, Low-Power mode 10Mbps
• Lane type:1 clock + 2 data, bi-directional
• Support Reverse Escape mode (High-speed reverse is not supported)
• On-chip differential 100Ω terminations with calibration
• Built-in self test function
• Supply voltage: 1.8V±10%, 0.8V±10%
• Junction temperature range: -40°C~25°C~125°C