RadHard Wideband SiGe VCO for Low Ultra Low Noise Application

CoreVCO chip consists of two ultra low phase noise, wideband RadHard VCOs (VCOBJT and VCOPMOS) for space and other critical environments. In VCOBJT, the core is built around HBT bipolar transistors while in VCOPMOS the core is built around PMOS transistors. Both are controlled via SPI interface.

VCOs offer excellent phase noise performance in a wide frequency range and have intrinsic radiation tolerance. VCOs incorporate frequency selection by digital tuning words and analog tuning voltage.

VCOs are fabricated in 0.25 um SiGe process and packaged in QFN 6mm x 6mm package. VCOBJT and VCOPMOS are also available as silicon IPs

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