PHY IP for HBM2 for Samsung 10LPP
The PHY IP for HBM2 is comprised of architectural improvements drawn from previous-generation DDR5 and LPDDR4 PHYs, achieving breakthrough performance, low energy per bit, and low area relative to the bandwidth provided. The PHY IP for HBM2 was developed by experienced teams with industry-leading domain expertise and extensively validated with multiple hardware platforms. It is engineered to quickly and easily integrate into SoCs, and is verified with the Denali Controller IP for HBM2 as part of a complete memory subsystem solution.
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Block Diagram of the PHY IP for HBM2 for Samsung 10LPP

HBM2 PHY IP
- HBM2/2E Memory PHY
- HBM2/2e PHY SMIC 12/14SFE from INNOSILICON
- HBM2/2e PHY Samsung 12/14LPP From INNOSILICON
- HBM2/2e PHY TSMC 12FFC/16FFCLL from INNOSILICON
- HBM2/2e PHY From INNOSILICON - High Performancce, Low Power and Low Latency Design in a Small Area
- Unlimited licenses, HBM2E, HBM3, Hard PHY, Customized, Turnkey solution