Inline Memory Encryption (IME) Security Module for DDR/LPDDR
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创飞芯OTP IPs可适用于不同的技术代(0.13/0.11 / 0.16 / 0.18微米和90/65/55/40/28纳米),可以很容易地移植到衍生逻辑技术,如射频、模拟、高压CMOS图像传感器和嵌入式闪存或EEPROM等,不需要改变工艺步骤或设备
Chuangfeixin (CFX)'s OTP IP is adopted in different generations of logic and HV technology (0.18/0.16/0.13/0.11 um and 90/65/55/40/28 nm). The required voltage for OTP bit cell programming can be supplied from internal charge pump or external VPP pin. The bit cell is programmed by applying a high-voltage pulse across the gate and substrate of the thin oxide transistor to break down the oxide between gate and substrate. Before programming, a blank OTP array comes with all bits reading as "0". After programming, an OTP bit cell will to be read as "1".
查看 创飞芯OTP IPs可适用于不同的技术代(0.13/0.11 / 0.16 / 0.18微米和90/65/55/40/28纳米),可以很容易地移植到衍生逻辑技术,如射频、模拟、高压CMOS图像传感器和嵌入式闪存或EEPROM等,不需要改变工艺步骤或设备 详细介绍:
- 查看 创飞芯OTP IPs可适用于不同的技术代(0.13/0.11 / 0.16 / 0.18微米和90/65/55/40/28纳米),可以很容易地移植到衍生逻辑技术,如射频、模拟、高压CMOS图像传感器和嵌入式闪存或EEPROM等,不需要改变工艺步骤或设备 完整数据手册
- 联系 创飞芯OTP IPs可适用于不同的技术代(0.13/0.11 / 0.16 / 0.18微米和90/65/55/40/28纳米),可以很容易地移植到衍生逻辑技术,如射频、模拟、高压CMOS图像传感器和嵌入式闪存或EEPROM等,不需要改变工艺步骤或设备 供应商
OTP IP
- 512x8 Bits OTP (One-Time Programmable) IP, TSM- 12FFC 0.8V/1.8V Process
- NVM OTP in Fujitsu (90nm, 65nm, 55nm, 40nm)
- NVM OTP in Dongbu (180nm, 150nm, 110nm)
- NVM OTP in SMIC (110nm, 65nm, 55nm, 40nm)
- NVM OTP in TSMC (180nm, 152nm, 130nm, 110nm, 90nm, 65nm, 55nm, 40nm, 28nm, 22nm, 16nm, 12nm, N7, N6, N5, N4P)
- NVM OTP in UMC (180nm, 153nm, 110nm, 90nm, 80nm, 55nm, 40nm, 28nm, 22nm)