Negative Differential Resistance based (NDR-based) RAM Cell

T-RAM Semiconductor's breakthrough Thyristor-RAM technology is a novel memory technology that addresses both the memory wall problem and the memory scalability crisis. Thyristor-RAM technology is a Negative Differential Resistance based (NDR-based) RAM cell, called TCCT™, which is a breakthrough from the traditional FET-based memory technologies such as 6T-SRAM and eDRAM. The result is a high-performance, high-density, and highly scalable embedded and discrete memory solution that allows for levels of memory density migration not possible before.

Unlike the failed embedded memory alternatives to 6T-SRAM, T-RAM Semiconductor has successfully developed the Thyristor-RAM technology from concept to production-readiness. Our Thyristor-RAM technology has been successfully implemented on both Bulk and SOI CMOS. Our team has proven the manufacturability and reliability of Thyristor-RAM technology by spending hundreds of man-years, processing thousands of wafers and creating an industry-standard 18Mb synchronous SRAM memory chip with excellent yield and reliability. Along the way, T-RAM Semiconductor has built a strong IP portfolio of over 90 patents.

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