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LPDDR54 PHY - Samsung Foundry 14LPP/LPU, TSMC N12 FFC
Consumer mobile and edge devices are processing large amounts of data in today’s applications, ranging from video processing, mobile gaming, to AI-based image recognition. As a result of these advancements, the memory sub-system plays a crucial role in the overall performance.
The TSS LPDDR54 PHY utilizes state-of-the-art architecture to maximize timing and voltage margins over process, voltage and temperature variations, while minimizing interruption to data traffic.
Built-in power management logic and advanced PLL design allows aggressive power state management and optimal system power usage.
At the system level, the LPDDR54 OPHY was designed with minimal package substrate layer and PCB layer count in mind. This enables the integration of a LPDDR memory sub-system solution in cost sensitive applications, such as consumer edge devices, digital set-top-box and TV, SSD controllers, and application processors.
The TSS LPDDR54 PHY is available in Samsung 14nm and TSMC 12nm technologies
The TSS LPDDR54 PHY utilizes state-of-the-art architecture to maximize timing and voltage margins over process, voltage and temperature variations, while minimizing interruption to data traffic.
Built-in power management logic and advanced PLL design allows aggressive power state management and optimal system power usage.
At the system level, the LPDDR54 OPHY was designed with minimal package substrate layer and PCB layer count in mind. This enables the integration of a LPDDR memory sub-system solution in cost sensitive applications, such as consumer edge devices, digital set-top-box and TV, SSD controllers, and application processors.
The TSS LPDDR54 PHY is available in Samsung 14nm and TSMC 12nm technologies
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Block Diagram of the LPDDR54 PHY - Samsung Foundry 14LPP/LPU, TSMC N12 FFC
LPDDR PHY IP
- LPDDR4/3/2 DDR4/3/2 ComboPHY
- LPDDR 4/3/2 DDR 4/3/2 Combo PHY SMIC28HK/HKC+
- Compensation Block of DDR3/DDR3L/DDR2/LPDDR2/LPDDR Combo PHY; UMC 55nm SP/RVT LowK Logic Process
- Compensation Block of DDR3/DDR3L/DDR2/LPDDR2/LPDDR Combo PHY for SIP Application; UMC 28nm HPC/RVT LowK Logic Process
- Data Block of DDR3/DDR3L/DDR2/LPDDR2/LPDDR Combo PHY for Chip Application; UMC 55nm SP/RVT LowK Logic Process
- Data Block of DDR3/DDR3L/DDR2/LPDDR2/LPDDR Combo PHY for Chip Application (compliant with DFI spec); UMC 40nm LP LowK Logic Process