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Local ESD Protection Cell
特色
- Local ESD protection cell for 1.1V/2.5V/3.3V device in core area
- Cell Size (Width * height)71.78um x 162.5um, 53um x 76um
- Work voltage: 1.1V 2.5V 3.3Vpower
- SMIC 0.040um Logic Salicide 1.1V/2.5V low leakage Process
- Metal uses M1~M3
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IO IP
- ONFI 4.1 NAND Flash Controller & PHY & IO Pads on 16nm
- TSMC 3nm (N3E) 1.8V SD/eMMC IO
- ONFI 4.1 NAND Flash Controller & PHY & IO Pads on 12nm
- ONFI 4.1 NAND Flash Controller & PHY & IO Pads on 28nm
- 2-16Gbps Multi-Protocol IO Supporting BOW, OHBI and UCIe
- LVDS IO handling data rate up to 50Mbps with maximum loading 60pF