LDO General purpose Ultra Fast Response Series ( Vin = 1.65-1.9V; Vo = 1.0V; Io=500mA ) - TSMC 28nm
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High-voltage solutions in baseline TSMC & GlobalFoundries technologies
Certus is pleased to offer High-voltage ESD solutions across multiple baseline TSMC and GlobalFoundries process technologies. Distinguishing Certus is our ability to provide high-voltage ESD solutions achieving 10V, 15V and even 20V using only baseline CMOS processing, without additional layers. This allows for straightforward co-integration of higher voltage applications -- such as charge pumps, high power RF, Power Management, and MEMS -- with conventional CMOS designs while keeping processing costs to a minimum.
Built into our IO libraries, and also offered as a separate service, is our strong ESD expertise. Certus was founded by ESD engineers and our results speak for themselves. Not only do we consistently exceed the standard ESD targets of 2KV HBM and 500V CDM, but we also provide on-chip solutions for standards such as IEC-61000-4-2, system-level ESD and Cable Discharge Events (CDE).
Other Certus specialty cell offerings include low-capacitance RF, small-footprint ESD, RGMII, Secure Digital, LVDS, Analog/RF and more across most major foundries and technology nodes. We are particularly suited at providing customized options in a cost-efficient framework. Please contact us for supplementary physical or electrical features that can suit your needs.
Built into our IO libraries, and also offered as a separate service, is our strong ESD expertise. Certus was founded by ESD engineers and our results speak for themselves. Not only do we consistently exceed the standard ESD targets of 2KV HBM and 500V CDM, but we also provide on-chip solutions for standards such as IEC-61000-4-2, system-level ESD and Cable Discharge Events (CDE).
Other Certus specialty cell offerings include low-capacitance RF, small-footprint ESD, RGMII, Secure Digital, LVDS, Analog/RF and more across most major foundries and technology nodes. We are particularly suited at providing customized options in a cost-efficient framework. Please contact us for supplementary physical or electrical features that can suit your needs.
特色
- High-Voltage ESD
- 10V, 15V, and 20V analog cells
- Negative ranges of -5V, -10V, -18V
- Fully compatible with baseline CMOS processing (no added layers)
- Full interoperability with Certus GPIO libraries
- ESD protection exceeding 2KV HBM, 500V CDM
- Physical Features
- Flexible cell and pad arrangements
- Wirebond and Flip-chip support
- Metal stack variants
优势
- 10V, 15V, 20V analog cells
- Negative ranges of -5V, -10V, -18V
- Compatibility with baseline CMOS processing (no added layers)
- Interoperability with Certus GPIO libraries
- Flexible cell and pad arrangements
- Wirebond & Flip-chip support
- Metal stack variants
- Proven >2KV HBM / 500V CDM ESD protection
可交付内容
- GDS
- CDL netlist
- Verilog stub
- Verilog behavioral model
- LEF
- Liberty Timing Files
- IBIS (option)
- Electrical datasheet
- User guide and application notes
- Consulting and Support
应用
- Charge pumps, high-power RF, power management, MEMS, HV
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High-voltage
- Near-threshold voltage and ultra-wide dynamic voltage and frequency scaling (UW-DVFS)
- sROMet compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 1M
- sROMet compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 1M
- ESD solution set for LV & advanced processes
- High voltage analog IO pads
- Over-voltage Protection Module to handle Over-voltage operation (up to 5.5 V) while using standard process 3.3 V devices, DELTA standard