GLOBALFOUNDRIES 22nm FDSOI USB2.0 OTG PHY

特色

• Process: Globolfoundries FDX 22nm 1.8V/0.8V process
• Low power dissipation while active, idle, or suspend
• Support power gating for a lowest leakage current, DVDD can be cut by the external power switch when USBPHY is not used.
• Short-to-5V and Short-to-ground protection for D+ and D- lines
• Compliant with the USB Spec Rev2.0
• Compliant with the UTMI Spec Rev1.05
• Compliant with the UTMI+ Spec Rev1.0 Level3
• Compliant with the On-The-Go (OTG) Spec Rev2.0
• Compliant with the Battery Charging Spec Rev1.1
• Supports 480Mbit/s “High Speed”, 12Mbit/s “Full Speed” and 1.5Mbit/s “Low Speed”
• Supports 60MHz/8-bit interface and 30MHz/16-bit interface
• Supply voltage: 2.97V~3.3V~3.63V; 1.62V~1.8V~1.98V; 0.72V~0.8V~0.88V
• Operating junction temperature: - 40°C ~ +25°C ~ +125°C
• More details, please go to below website to contact VeriSilicon location sales : http://www.verisilicon.com/en/contactus.asp