Zhuhai Chuangfeixin’s Floating-gate eNOR Flash memory macro are silicon characterized and qualified on Huali Microelectronics Corporation 65nm Floating Gate technology. The eNOR macro have demonstrated to achieve 10 years of data retention reliability and passed 1000hours of burn-in reliability tests. The Zhuhai Chuangfeixin floating-gate eNOR IP are cost optimized in terms of area and density, reliability and performance.
“With our Floating gate based eNOR flash memory IP and stand-alone SPI NOR flash products fully qualified in Huali’s 65nm floating gate flash technology, our IP and Flash business not only in USA、China market but also to serve Worldwide design houses, who need our stand-alone NOR and NAND flash memory and embedded flash IP (Antfuse OTP, MTP, eNOR and eNAND) solutions. Our technology has such advantages as ultra-high reliability and security, automotive grade operation temperature range (-45C to 125C), high speed, ultra-low power, high density and low program voltages.