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Dual Low-Side Ultrafast MOSFET Driver
The dual high-speed gate drivers are especially well suited for driving the MOSFETs and IGBTs. Each of the two outputs can source and sink 4A of current while producing voltage rise and fall times of less than 10 ns. Low propagation delay and fast, matched rise and fall times make the driver ideal for high-frequency and high-power applications.
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Block Diagram of the Dual Low-Side Ultrafast MOSFET Driver
DC-DC converters IP
- DC-DC Buck Ultra Fast Response High Power Series ( Vin = 2.3-4.6V; Vo = 1.5-2.0V; Io = 150mA ) - TSMC 65nm
- DC-DC Buck Ultra Fast Response High Power Series ( Vin = 2.3-4.6V; Vo = 1.5-2.0V; Io = 300mA ) - TSMC 65nm
- DC-DC Buck Ultra Fast Response High Power Series ( Vin = 2.3-4.6V; Vo = 1.5-2.0V; Io = 350mA ) - TSMC 65nm
- DC-DC Buck Ultra Fast Response High Power Series ( Vin = 2.3-5.5V; Vo = 1.0-3.0V; Io = 600mA ) - GLOBALFOUNDRIES 65nm
- DC-DC Buck Ultra Fast Response High Power Series ( Vin = 2.3-5.5V; Vo = 1.0-3.0V; Io = 600mA ) - TSMC 40nm
- DC-DC Buck Ultra Fast Response High Power Series ( Vin = 2.3-4.6V; Vo = 1.5-2.0V; Io = 700mA ) - TSMC 65nm