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High Bandwidth Memory (HBM3E) 3 PHY for TSMC N3P

Designed for performance and low latency in AI/ML, HPC, data center and graphics applications The High-Bandwidth Memory generation 3 (HBM3E) PHY is optimized for systems that require ...

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High Bandwidth Memory (HBM3E) 3 PHY for TSMC N5P

Designed for performance and low latency in AI/ML, HPC, data center and graphics applications The High-Bandwidth Memory generation 3 (HBM3E) PHY is optimized for systems that require ...

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High Bandwidth Memory (HBM3E) 3 PHY for TSMC N7

Designed for performance and low latency in AI/ML, HPC, data center and graphics applications The High-Bandwidth Memory generation 3 (HBM3) PHY is optimized for systems that require ...

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High Bandwidth Memory (HBM2E) HBM2E PHY for Samsung 11nm

Optimized for high bandwidth and low latency, the HBM2E PHY delivers maximum performance and flexibility in a compact form factor HBM2E is a high-performance memory that features reduced ...

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28 nm Bulk CMOS IP - V- & E-band mmWave components

Our 28 nm Bulk CMOS IP portfolio comprises a wide selection of V- & E-band mmWave components, featuring best-in-class performance, small footprints, modular architectures and lowpower consumption. ...

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