3.3V General Purpose I/O Staggered Pad Set
These 22nm libraries are available in inline and staggered CUP wire bond implementations with a flip chip option.
To design a functional I/O power domain with these cells, an additional library is required – 3.3V Support: Power. That library contains an input-only buffer, isolated analog I/O, and a full complement of power cells along with corner and spacer cells to assemble a complete pad ring by abutment. An included rail splitter allows multiple power domains to be isolated in the same pad ring while maintaining continuous VDD/VSS for robust ESD protection.
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ESD IP
- on-chip ESD protection
- TSMC RF ESD specifiically targeting low capacitance ESD
- 1.8V/3.3V flipchip I/O library with 4kV HBM ESD protection, I2C compliant ODIO
- A Flip-Chip compatible I/O Library in TSMC 180nm BCD with 1.8V GPIO, 1.8V to 3.3V Analog, with associated ESD cells.
- 5V Library for Generic I/O and ESD Applications TSMC 12nm FFC/FFC+ process.
- RF I/O Pad Set and Discrete RF ESD Protection Components