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12 Track Ultra-High Speed Standard Cell Library (HSSC) in 16/12nm FinFET
M31 provides the 12 track ultra-High Speed Standard Cell library (HSSC) in 16/12nm FinFET technology nodes. As we know, FinFET device has better device characterization than planar CMOS for high performance and low power applications. Consideration of higher level circuit view, M31 could depend on customer’s design critical path to customize special combo and OPT cells to minimize critical path delay. In 16/12nm technology node, back-end RC impact cell performance a lot, thus M31 also optimizes the cell layout to minimize RC impact on cell performance. This cell library has been successfully used in central processing unit products whose frequency could reach 3 ~ 3.5 GHz.
特色
- Fully customized layout for performance optimization
- Customized OPT cells for high speed applications
- Fine tune N/P skew cells to boost critical path circuit block
- Multi-channel length/Multi-VT support for performance optimization
- Provide ECO library for flexibility
- Freely swap VT for speed/power optimization
- Available in 12nm,16nm process nodes
- Rich sets of driving strengths for timing closure
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Cell Library
- 12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- 12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- 12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- 12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- 7 track Ultra High Density standard cell library at TSMC 28 nm
- 7 track High Density standard cell library at TSMC 40 nm