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1.8V General Purpose I/O Staggered Pad Set
The 1.8V GPIO FT library provides ultra low leakage general purpose bidirectional I/O cells. These programmable, multi-voltage I/O’s give the system designer the flexibility to design to a wide range of performance targets.
These 22nm libraries are available in inline and staggered CUP wire bond implementations with a flip chip option.
To design a functional I/O power domain with these cells, an additional library is required – 1.8V Support: Power. That library contains an input-only buffer, isolated analog I/O, and a full complement of power cells along with corner and spacer cells to assemble a complete pad ring by abutment. An included rail splitter allows multiple power domains to be isolated in the same pad ring while maintaining continuous VDD/VSS for robust ESD protection.
These 22nm libraries are available in inline and staggered CUP wire bond implementations with a flip chip option.
To design a functional I/O power domain with these cells, an additional library is required – 1.8V Support: Power. That library contains an input-only buffer, isolated analog I/O, and a full complement of power cells along with corner and spacer cells to assemble a complete pad ring by abutment. An included rail splitter allows multiple power domains to be isolated in the same pad ring while maintaining continuous VDD/VSS for robust ESD protection.
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IO IP
- ONFI 4.1 NAND Flash Controller & PHY & IO Pads on 16nm
- TSMC 3nm (N3E) 1.8V SD/eMMC IO
- ONFI 4.1 NAND Flash Controller & PHY & IO Pads on 12nm
- ONFI 4.1 NAND Flash Controller & PHY & IO Pads on 28nm
- 2-16Gbps Multi-Protocol IO Supporting BOW, OHBI and UCIe
- LVDS IO handling data rate up to 50Mbps with maximum loading 60pF