Everspin进入针对世界首个适用于28 nm 1 Gb STT-MRAM元件的试生产阶段

New component expands Everspin’s industry-leading STT-MRAM product family and enables new possibilities for customers with its higher density and DDR4-based interface

CHANDLER, Ariz.-- June 11, 2019 --Everspin Technologies, Inc. (NASDAQ: MRAM), the world's leading developer and manufacturer of Magnetoresistive RAM (MRAM), today announced it has completed development activity and entered the pilot production phase of its 28 nm 1-Gigabit (Gb) Spin Torque Transfer Magnetoresistive Random Access Memory (STT-MRAM) product. Everspin has been in volume production of its 256 Mb STT-MRAM product for more than a year and now adds the ground-breaking 1 Gb capacity product to its lineup, extending Everspin’s leadership in STT-MRAM memory component manufacturing.

Everspin’s STT-MRAM devices enable enterprise infrastructure and data center providers to increase the reliability and performance of systems where high-performance data persistence is critical by delivering protection against power loss without the use of supercapacitors or batteries. In addition, the larger density 1 Gb part offers more effective management of I/O streams, creating a greater level of latency determinism and allowing storage OEMs to significantly improve quality of service of their products. Similar benefits can also be achieved using the 1 Gb STT-MRAM device as a persistent data buffer in storage and fabric accelerators, computational storage, and other applications.

“The Everspin team has executed extremely well on completing development of our ground-breaking 1 Gb STT-MRAM devices. This is yet another bellwether milestone on STT-MRAM’s march into larger market opportunities delivering a significant increase in density over our previous 256 Mb parts coupled with the more mainstream DDR4-based interface,” said Kevin Conley, Everspin’s President and CEO. “We are also pleased that progress with both customer qualification and yield maturity continues to be on track with volume production expected to start in the third quarter.”

Everspin’s 1 Gb product family includes both 8-bit and 16-bit DDR4 compatible (ST-DDR4) interface versions of the device and are available in a JEDEC-compliant BGA package.

About Everspin Technologies

Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in the design, volume production and distribution of Magnetoresistive RAM (MRAM) into markets and applications where data persistence, performance, and endurance are paramount. Serving applications across the data center, industrial, and transportation markets, Everspin has built the strongest and fastest-growing foundation of MRAM users in the world. For more information, visit www.everspin.com. .