三星的10nm FinFET128 Mbit SRAM较其14nm工艺类似器件尺寸优化38%
三星给了其10纳米技术是finFET偷看并在国际固态电路会议(ISSCC)在一份文件中的工艺制成一种先进的128兆位的SRAM。
![]() |
E-mail This Article | ![]() |
![]() |
Printer-Friendly Page |
Silvaco收购物理验证解决方案供应商POLYTEDA CLOUD LLC
智原推出完整的影像与显示高速接口IP于联电28与40纳米工艺
Cadence收购NUMECA,以通过计算流体动力学扩展系统分析能力
It's Time to Look at FD-SOI (Again)
Verifying Dynamic Clock switching in Power-Critical SoCs
Let's make RISC-V connected systems synonymous with security
Protocol and Interface Agnostic Universal D2D Controller for HPC and Chiplets
Huawei tries to acquire chip ecosystem
三星给了其10纳米技术是finFET偷看并在国际固态电路会议(ISSCC)在一份文件中的工艺制成一种先进的128兆位的SRAM。
![]() |
E-mail This Article | ![]() |
![]() |
Printer-Friendly Page |