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三星的10nm FinFET128 Mbit SRAM较其14nm工艺类似器件尺寸优化38%
三星给了其10纳米技术是finFET偷看并在国际固态电路会议(ISSCC)在一份文件中的工艺制成一种先进的128兆位的SRAM。
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三星给了其10纳米技术是finFET偷看并在国际固态电路会议(ISSCC)在一份文件中的工艺制成一种先进的128兆位的SRAM。
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