三星的10nm FinFET128 Mbit SRAM较其14nm工艺类似器件尺寸优化38%
三星给了其10纳米技术是finFET偷看并在国际固态电路会议(ISSCC)在一份文件中的工艺制成一种先进的128兆位的SRAM。
![]() |
E-mail This Article | ![]() |
![]() |
Printer-Friendly Page |
QuickLogic 与 Intrinsic ID 强强联手打造eFPGA 安全解决方案
Rapid Silicon采用晶心科技具有DSP/SIMD 扩充指令集之AndesCore™ D45以及Andes Custom Extension™ 架构
AES 256 algorithm towards Data Security in Edge Computing Environment
FPGA Market Trends with Next-Gen Technology
Add Security And Supply Chain Trust To Your ASIC Or SoC With eFPGAs
Optimized on-chip ESD protection to enable high-speed Ethernet speed in cars
How Synopsys and Infineon Are Advancing Vehicle Virtualization and AI-Fueled Features
Design for differentiation: architecture licenses in RISC-V
三星给了其10纳米技术是finFET偷看并在国际固态电路会议(ISSCC)在一份文件中的工艺制成一种先进的128兆位的SRAM。
![]() |
E-mail This Article | ![]() |
![]() |
Printer-Friendly Page |